|  | 規(guī)格型號 | RY59N10C | 
            
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              | 產品參數 | 電壓:100V,電流:59A,Vgs:20V,Rds:0.015Ω | 
            
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              | 產品品牌 | 日月辰 | 產品封裝 | TO-220 | 
            
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              | 詳細說明 |  |  |  | 
          
          
          RY59N10C TO-220封裝

	Description
	This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
	Features
	1) VDS=100V,ID=59A,RDS(ON)<15mΩ@VGS=10V
	2) Low gate charge.
	3) Green device available.
	4) Advanced high cell denity trench technology for ultra RDS(ON). 
	5) Excellent package for good heat dissipation.
	
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